TechtheFutureofMemoryandStorageInsightsMemory TechnologyTrends &OutlookDRAM&NANDDr.JeongdongChoeFMS2025Senior Technical Fellow. SVPwww.techhsights.com
theFutureofMemoryandStorageSession1>DRAMDRAMMarket Samsung, SK hynix, Micron-CXMT.Nanva, Winbond, PSMC·DDR/LPDDR/GDDR/HBMInsights
DRAM Process Nodes (Production)4F°DRAMMP2024202520262027202820292030100%4-21C1d/1675%1518lala25%0%pZ-10sZ-1b92-168z-5osZ-po,9z-z0bz-zb6Z-pO8z-20-6Z-zoLZ-EOLZ-zb9Z-Fo9Z-Eb9z-zo6Z-10sz-EbZZ-VOvZ-EbOE-5OVZ-5oLZ-16elxnm#lynm1znmlanmIbnmIcnmildnm0anmSource:DRAMMarketAnalysisQ22025,TechinsightsTech,Insights
DRAM Bit Production (ExpectedDRAM Bit Production (Prediction)TechInsights(Eb)300Ver.MD-2025-01TechMosights-Samsung-SK hynixeongdongChoe250SAMSUNG-MicronCXMTuopompord8>-Nanya--Winbond200150micron100ecmtSwinband2023202420252026202720282029YearSourcer:DRAMMarketAnalysis Q42024, TechInsights, editedTechInsights
DRAMTechnologyNode(D/R,F)TechInsights,10nm-class DRAM Technology (D/R) TrendVer.MD-2501-01Techinsights21II-Samsung-SK hynix(wu)a/a19AMicronCXMT14.71F14.61513.0412.651313.812.5411D1xD1YD1ZD1a(a)D1b(B)DRAMGenerationsTech,Insights
DRAM Pitch Trends: WL,BLWerMO-2501-08DRAM Cell Pitch Trends (MeasuredTechmeighe70OP_WLOP_BLLinear(P_WL)(wu)youdLinear(P_BL)DRAMCell BLPitchDRAMCell WLPitch302015202535DRAM Cell ActivePitch(nm),Tech.Insights
DIb(D1B)DRAM Cell: SamsungSK hynix vs. MicronVSItemsSamsung DibSK hynixD1bMicron DIB36.68mm/LPDDR5X16Gb37.98mm?/DDR516Gb,36.78mm7/LPDDR516GbDieSize/ExDeviceSamsungSKhynixMicron(6.55mmx5.60mm)(6.47mmx5.87mm)(7.02 mmx524mm)BitDensity446.67Mb/mm243140Mb/mm2435.0Mb/mm2Cell size0.00123pm20.00125pm20.00133um2WL(CellGate)MaterialsTiN/PolyTiN/PolyTiN/PolyActiveIslandLength85nm84nm92nmPItch(Act/WL/BL)Measured235nm/326nm/37.6nm234nm/33.1nm/37.9nm24.0nm/340nm/39.0nmFeatureSIze[F,D/R]13.1nm12.5nm12.6nmInterconnectiontoBLM1M1M1/M2Perl-GatePitch(Smallest)100nm130nm108nmCellSNLPShapeCircleCircleCircleSNCEtchLikely,SACLikely,SACLikely,SACTopPlateMaterlalsSiGe230nm onTiNW/siGe54nm/95nm onTiNw/siGe100nm/88 nmonTiNCap.DlelectricsDetectedHfo/z1o/ztaio(Nbo)ZrO/HfAIO/ztaIa/HfaIo/ztAOZrO/HfAzra/Htzro/AIOCap.MESHPhoto/EtchPatterCircle/TriangleCircle/TriangleOval/HexagonalNumber of MetalLayers6(1W,4Cu1A1)+RDL5(1W,3Cu1A)+RDL7(2W,4Cu,1A)+RDLTech,Insights
CXMTDRAM:G4AP42071930050ItemsCXMTGICXMTG3CXMTG479.20mm244.66mm266.99mm2(7.12mmx10.99mm)(487mmx917mm(819mmx818mm)Die Size/Ex. DeviceCXMTCXDQ3ABAM-CGCXMTCXDB6CCDM-MAGloway18GBX2(3208)D0R5-60001GBDDR4Device8GBLPDDR4XDevice2GBDDR5Device(8GbDie)(8GbDie)16GbDleBitDensity0.101Gb/mm0179Gb/mm0239Gb/mm2Cell size0.0044pm0.0025pm0.0020pr2Feature Size23.8nm18.0nm16.0nmPitch340nm/46.6nm/542nm(Act/WL/BL)Measured45.0nm/61.0nm/720nm29.8nm/417nm/47.9nmRelativeGeneration(Samsung/skD2yDlxDXZhynix/Micron)w/(TiN)w/(TIN)Poly-SI/TINCell GateMaterialsCap. DielectricsZro/ZrAIOzro/ZrAIOzro/Hto/zro/Hto/zraioTech.Insights
Hybrid Bondinq for HBM ApplicationDue to limited HBM module heiaht (Form Factor), HB structures with thinner dies are requiredHBMModuleGap-fill StructureGaplessStructure(withThinnerDles)ReducedHeightHBMModuleThicknessonthe InterposerDie(ym)HybridBondingEX.SameungHBM3GHHybridBonding12HiimDleThickTSVForm FactorsungHBM312HD(NOwThinnerDie(@20um)ReducedHeight15心1025Num...
